0%
Uploading...

MMBT5551LT1G

Manufacturer:

On Semiconductor

Mfr.Part #:

MMBT5551LT1G

Datasheet:
Description:

BJTs SOT-23-3 SMD/SMT NPN 225 mW Collector Base Voltage (VCBO):180 V Collector Emitter Voltage (VCEO):160 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)160 V
Length2.9 mm
Width1.3 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height940 µm
PackagingReel
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Current Rating600 mA
Max Power Dissipation225 mW
Power Dissipation225 mW
Max Collector Current600 mA
Collector Emitter Breakdown Voltage160 V
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)160 V
Max Junction Temperature (Tj)150 °C
Max Breakdown Voltage160 V
Collector Base Voltage (VCBO)180 V
Collector Emitter Saturation Voltage150 mV
Emitter Base Voltage (VEBO)6 V
hFE Min80
Schedule B8541210080
Max Cutoff Collector Current100 nA
Transistor TypeNPN

Stock: 285578

Distributors
pcbx
Unit Price$0.05216
Ext.Price$0.05216
QtyUnit PriceExt.Price
1$0.05216$0.05216
10$0.02608$0.26080
50$0.02006$1.00300
100$0.01803$1.80300
500$0.01620$8.10000
1000$0.01328$13.28000
3000$0.01088$32.64000
5000$0.01026$51.30000
10000$0.00968$96.80000
30000$0.00913$273.90000
50000$0.00861$430.50000